IMPROVING SHORT CHANNEL EFFECT OF MOS DEVICES BY RETROGRADE WELL ENGINEERING USING TILTED DOPANT IMPLANTATION INTO RECESSED SOURCE/DRAIN REGIONS
摘要
A method of providing a halo implant region in a substrate of a MOS device having a gate electrode thereon and defining source/drain regions, a MOS device fabricated according to the above method, and a system comprising the MOS device. The method comprises: defining undercut recesses in the substrate at the source/drain regions thereof, the undercut recesses extending beneath the gate electrode; creating a halo implant region beneath the gate electrode between the recesses; and providing raised source/drain structures in the undercut recesses after creating the halo implant region.
申请公布号
WO2006039641(A2)
申请公布日期
2006.04.13
申请号
WO2005US35474
申请日期
2005.09.29
申请人
INTEL CORPORATION;HOFFMANN, THOMAS;TYAGI, SUNIT;CURELLO, GIUSEPPE;SELL, BERNHARD;AUTH, CHRISTOPHER
发明人
HOFFMANN, THOMAS;TYAGI, SUNIT;CURELLO, GIUSEPPE;SELL, BERNHARD;AUTH, CHRISTOPHER