FILM DEPOSITION MATERIAL, FILM DEPOSITION METHOD AND ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a technology for easily depositing a molybdenum film (a molybdenum silicide film or a molybdenum nitride film) having high purity at a low temperature by using a raw material containing no halogen which might causes adverse effect on a semi-conductor element. SOLUTION: A film deposition material is used for depositing a molybdenum film, a molybdenum silicide film or a molybdenum nitride film. The Mo source of the film is one or two or more of compounds selected from a group of bis-cyclo-penta-dienyl molybdenum di-hydride, bis-methyl-cyclo-penta-dienyl-molybdenum dihydride, bis-ethyl-cyclo-penta-dienyl-molybdenum dihydride, and bis-isopropyl cyclo-penta-dienyl-molybdenum dihydride. COPYRIGHT: (C)2006,JPO&NCIPI