发明名称 |
SUBSTRATE TREATMENT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To make it possible to effectively heat the inner wall of a reaction vessel and to prevent the outer wall of the vessel from becoming hot. SOLUTION: The substrate treatment device comprises: a reaction vessel 5 of treating a substrate 11; treatment gas feed piping 1 of feeding treatment gas into the reaction vessel 5; exhaust piping 7 of exhausting the inside of the reaction vessel 5; a substrate mounting stand 4 of supporting the substrate 11 at the inside of the reaction vessel 5; a first heater 17 of heating the substrate 11 in the reaction vessel 5; an outer vessel 6 provided so as to cover the reaction vessel 5; and a second heater 12 provided in contact with the reaction vessel 5 inside a space 100 surrounded by the reaction vessel 5 and an outer vessel 6 and heating a reaction vessel wall 5a. The device further comprises: gas feed piping 13 of feeding gas into the space 100 surrounded by the reaction vessel 5 and the outer vessel 6; exhaust piping 9 of exhausting the inside of the space 100 surrounded by the reaction vessel 5 and the outer vessel 6; and a pressure control valve 15 of controlling the pressure in the space 100 surrounded by the reaction vessel 5 and the outer vessel 6. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006097080(A) |
申请公布日期 |
2006.04.13 |
申请号 |
JP20040284519 |
申请日期 |
2004.09.29 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
SANO ATSUSHI |
分类号 |
C23C16/44;C23C16/46;H01L21/31 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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