发明名称 |
3D interconnect with protruding contacts |
摘要 |
This invention relates to a semiconductor having protruding contacts comprising, a first semiconductor substrate having at least one interconnect located substantially within the first substrate, and a second semiconductor substrate having at least one protruding contact point that substantially contacts at least one interconnect.
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申请公布号 |
US2006076664(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
US20040960827 |
申请日期 |
2004.10.07 |
申请人 |
CHEN CHIEN-HUA;CHEN ZHIZHANG;MEYER NEAL W |
发明人 |
CHEN CHIEN-HUA;CHEN ZHIZHANG;MEYER NEAL W. |
分类号 |
H01L23/02;H01L23/52 |
主分类号 |
H01L23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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