发明名称 Non-volatile memory and method of fabricating same
摘要 In one embodiment, a semiconductor device comprises an insulated floating gate disposed on a semiconductor substrate, an insulated program gate formed at least on a side surface of the floating gate, and an insulated erase gate disposed adjacent the floating gate.
申请公布号 US2006076607(A1) 申请公布日期 2006.04.13
申请号 US20050172112 申请日期 2005.06.29
申请人 KANG SUNG-TAEG 发明人 KANG SUNG-TAEG
分类号 H01L29/788 主分类号 H01L29/788
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