发明名称 Manufacturing molecular memory fields involves depositing, structuring lower electrode(s)/conducting track(s) on substrate, depositing electrically active self-organized monolayer, bringing substrate into contact with conductive material
摘要 <p>The method involves depositing and structuring the lower electrode(s) and/or conducting track(s) on a substrate, depositing the layer of an electrically active self-organized monolayer of at least one organic connection essentially orthogonal to the lower electrode(s) and/or conducting track(s), bringing the substrate into contact with a conductive material so that a conductive layer forms a selective connection on the electrically active layer, whereby the conductive layer on the self-organized monolayer forms the upper electrode and/or conducting track.</p>
申请公布号 DE102004041555(A1) 申请公布日期 2006.04.13
申请号 DE20041041555 申请日期 2004.08.27
申请人 INFINEON TECHNOLOGIES AG 发明人 ZSCHIESCHANG, UTE;KLAUK, HAGEN;HALIK, MARCUS;ROHDE, DIRK;SCHMID, GUENTER
分类号 H01L51/00;G11C13/02 主分类号 H01L51/00
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