发明名称 |
Manufacturing molecular memory fields involves depositing, structuring lower electrode(s)/conducting track(s) on substrate, depositing electrically active self-organized monolayer, bringing substrate into contact with conductive material |
摘要 |
<p>The method involves depositing and structuring the lower electrode(s) and/or conducting track(s) on a substrate, depositing the layer of an electrically active self-organized monolayer of at least one organic connection essentially orthogonal to the lower electrode(s) and/or conducting track(s), bringing the substrate into contact with a conductive material so that a conductive layer forms a selective connection on the electrically active layer, whereby the conductive layer on the self-organized monolayer forms the upper electrode and/or conducting track.</p> |
申请公布号 |
DE102004041555(A1) |
申请公布日期 |
2006.04.13 |
申请号 |
DE20041041555 |
申请日期 |
2004.08.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ZSCHIESCHANG, UTE;KLAUK, HAGEN;HALIK, MARCUS;ROHDE, DIRK;SCHMID, GUENTER |
分类号 |
H01L51/00;G11C13/02 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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