发明名称 |
NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THEREOF |
摘要 |
Disclosed is a method for the preparation of a nitride semiconductor device having a nitride semiconductor layer composed of InN on which a high quality layer of a semiconductor of a nitride of a group III element typified by InN or GaN is grown as traversing dislocation or an interfacing layer is suppressed from being generated. The method includes a vapor depositing step of vapor depositing InN on the (111) plane of a yttria stabilized zirconia substrate (12) for forming the nitride semiconductor layer oriented with c-axis of an InN crystal of the hexagonal system substantially vertical with respect to the (111) plane of the substrate (12).
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申请公布号 |
EP1646077(A1) |
申请公布日期 |
2006.04.12 |
申请号 |
EP20040723660 |
申请日期 |
2004.03.26 |
申请人 |
KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY |
发明人 |
FUJIOKA, HIROSHI;OSHIMA, MASAHARU |
分类号 |
C30B25/18;C30B29/40;H01L21/20;H01L21/205;H01L29/04;H01L29/20;H01L33/00;(IPC1-7):H01L21/203 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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