Festspeicher in integrierter Schaltungsbauweise mit zwei UEbergaengen und Verfahren zu dessen Herstellung

摘要

1352716 Read-only memories INTERSIL Inc 27 July 1971 [14 Dec 1970] 35133/71 Heading G4A [Also in Division H1] An integrated circuit read-only memory comprises row and column conductors having a pair of back-to-back diodes (e.g. formed by the two junctions in a transistor) connected between them at each crossing point, information being recorded in the store by applying an electrical surface short across one diode in selected pairs so as to leave a conduction path between the row and column conductors through the remaining diodes of the selected pairs. Preferably the short is formed by applying a reverse bias voltage in excess of the junction breakdown voltage across the junction to cause migration of the metal of the contacts along the top of the semi-conductor material beneath its oxide insulating layer.