| 摘要 |
The present invention relates to a method for the patterning of a stack of layers on a surface with high topography. A method of the present invention can be used to realize gate patterning for (multiple Gate FETs) MUGfets, to realize patterning of the control gate in Non-volatile Memory applications and for the patterning of the poly emitter in BiCMOS devices. The present invention also relates to a device obtainable by a method of the invention.
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