| 摘要 |
A light-emitting device employing a GaN based semiconductor comprising an n-type cladding layer (124), an active layer (129) consisting of an n-type first barrier layer (126), a well layer (128) and a second barrier layer (130), a p-type block layer (132), and a p-type cladding layer (134). By setting the relation among the band gap energy Egb of the p-type block layer (132), the band gap energy Eg2 of the second barrier layer (130), the band gap energy Eg1 of the first barrier layer (126) and the band gap energy Egc of the n-type and p-type cladding layers (124, 134) to be Egb > Eg2 > Eg1 >= Egc, carriers are confined efficiently, thereby increasing the emission intensity. |
