发明名称 Integrated circuit with reverse engineering protection
摘要 <p>Technique and structures for camouflaging an integrated circuit structure. The integrated circuit structure is formed by a plurality of layers of material having controlled outlines and controlled thicknesses. A layer of dielectric material of a controlled thickness is disposed among said plurality of layers to thereby render the integrated circuit structure intentionally inoperable.</p>
申请公布号 GB2405531(B) 申请公布日期 2006.04.12
申请号 GB20040027115 申请日期 2003.05.06
申请人 HRL LABORATORIES LLC;RAYTHEON COMPANY 发明人 LAP-WAI CHOW;WILLIAM M CLARK JR;JAMES P BAUKUS
分类号 H01L21/331;H01L27/02;H01L21/822;H01L21/8238;H01L21/8247;H01L23/58;H01L27/04;H01L27/092;H01L27/115;H01L29/732;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L21/331
代理机构 代理人
主权项
地址