| 摘要 |
A lateral channel transistor with an optimal conducting channel formed in widebandgap semiconductors like Silicon Carbide and Diamond is provided. Contrary to conventional vertical design of power transistors, a higher, optimum doping for a given thickness supports higher source/drain blocking voltage. A backside gate is insulated from the channel region using a low doped layer of the opposite conductivity type than the channel region to support the rated blocking voltage of the device.
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