Electron beam lithography method

摘要

An electron beam lithography method for performing lithography of elements included in a pattern by scanning a disk having resist coated thereon, placed on a rotating stage which is movable in a radial direction of the disk, with an electron beam while rotating the rotating stage. The electron beam has a beam diameter smaller than a minimum width of an element shape. The electron beam is reciprocally oscillated in a circumferential direction X approximately orthogonal to a radial direction Y of the disk and deflected in the radial direction Y, thereby filling in the element shape. Lithography of the elements is sequentially performed by rotating the disk unidirectionally, and thus a desired micropattern is drawn in the entire region of the disk. A lithographic length L of the element in the circumferential direction X may be defined by amplitude of the reciprocal oscillation of the electron beam.