发明名称 Nonvolatile semiconductor memory device
摘要 Floating gates and control gates are alternately arranged on a substrate periodically in a first direction via a gate insulation film. Each floating gate has a first portion whose sectional shape is rectangular, and a second portion which is positioned substantially in a middle portion of the first portion and whose sectional shape is rectangular and whose length in a direction parallel to the first direction is smaller than that of the first portion. Each control gate has a third portion between the second portions of a pair of adjacent floating gates, and a fourth portion positioned between the first portions of a pair of adjacent floating gates. The floating gate and a pair of control gates positioned on opposite sides of the floating gate constitute one memory cell, the adjacent memory cells share the control gate positioned between the memory cells.
申请公布号 US7026684(B2) 申请公布日期 2006.04.11
申请号 US20040940844 申请日期 2004.09.15
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SAKUMA MAKOTO;ARAI FUMITAKA;MATSUNAGA YASUHIKO
分类号 H01L29/788;G11C16/04;H01L21/8247;H01L27/115;H01L29/423;H01L29/76;H01L29/78;H01L29/792 主分类号 H01L29/788
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