| 摘要 |
It is the goal of the invention to provide an improved method and an improved apparatus to measure the diffusion length of minority charge carriers in semiconductors. In particular, the method should be easy to implement. The method should yield higher measurement accuracy. The data analysis should be easy. The apparatus should be easy to use. This goal is achieved using the following procedure steps: Application of periodically alternating light of different wavelengths (lambda 1, lambda2 ) to the semiconductor sample ( 28 ); Detection of the surface potential modulation caused by the application of the light, Adjustment of at least one of the light intensities (I 1 ) in such a manner that the surface potential modulation disappears; and Determination of the diffusion length (L) of the minority charge carriers from the adjusted light intensities. An apparatus consists of a first and a second monochromatic light source ( 10, 14 ) with different wavelengths (lambda 1, lambda2 ), means ( 18, 20, 22 ) to periodically apply the light of the first and second light source ( 10, 14 ) to the sample ( 28 ), means ( 30 ) to detect the surface potential of the sample ( 28 ), means ( 32 ) to detect the modulation of the surface potential of the sample, means ( 34, 36 ) to adjust the intensity of the light of at least one of the light sources ( 10 ) in such a manner that the modulation of the surface potential disappears and means to determine the diffusion length (L) of the minority charge carriers from the adjusted light intensities of the first and second light source (FIG. 1 ).
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