发明名称 Plasma producing apparatus and doping apparatus
摘要 An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.
申请公布号 US7026764(B2) 申请公布日期 2006.04.11
申请号 US20030390882 申请日期 2003.03.19
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 NAKAMURA OSAMU
分类号 H01J7/24;H05H1/46;H01J37/32;H01L21/265;H05H1/48 主分类号 H01J7/24
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