| 发明名称 |
Method of forming PZT ferroelectric film |
| 摘要 |
A method of forming a ferroelectric film including a complex oxide of PZT family on a metal film formed of Pt by using a metalorganic chemical vapor deposition method. At first, supply of Pb is started to form an alloy film of Pb and Pt on the metal film. Supply of Ti is then started to form an initial crystal nuclei of PbTiO<SUB>3 </SUB>on the alloy film. Then, supply of Zr is started to form a crystal grown layer of the complex oxide of PZT family on the initial crystal nuclei.
|
| 申请公布号 |
US7026169(B2) |
申请公布日期 |
2006.04.11 |
| 申请号 |
US20040800722 |
申请日期 |
2004.03.16 |
| 申请人 |
SEIKO EPSON CORPORATION |
发明人 |
KIJIMA TAKESHI;HAMADA YASUAKI;NATORI EIJI |
| 分类号 |
H01L21/00;H01L41/24;C23C16/40;C30B25/02;C30B29/32;H01L21/02;H01L21/314;H01L21/316;H01L21/8246;H01L27/105;H01L27/115;H01L41/09;H01L41/187 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
