| 摘要 |
An integrated thin film capacitive element comprising a dielectric material of the specified composition that exhibits increased voltage tunability of capacitance and capacitance density and a production process thereof are disclosed. The integrated thin film capacitive element comprises a capacitor structure constituted from a lower electrode, a dielectric layer comprised of the high dielectric constant material represented by the formula: (Ba<SUB>(1-y)(1-x)</SUB>Sr<SUB>(1-y)x</SUB>Y<SUB>y</SUB>)Ti<SUB>1+z</SUB>O<SUB>3+delta </SUB>with the range 0<x<1, 0.007<y<0.02, -1<delta<0.5, AND (BA<SUB>(1-y)(1-x)</SUB>+Sr<SUB>(1-y)x</SUB>)/Ti<SUB>1+z</SUB><1, and an upper electrode. An electronic device comprising the capacitive element of the present invention is also disclosed.
|
