发明名称 |
Low magnetization materials for high performance magnetic memory devices |
摘要 |
Techniques for attaining high performance magnetic memory devices are provided. In one aspect, a magnetic memory device having one or more free magnetic layers is provided. The one or more free magnetic layers have a low magnetization material adapted to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter. The device may be configured such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20. The magnetic memory device may have a magnetic random access memory (MRAM) device. A method of producing a magnetic memory device is also provided.
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申请公布号 |
US7026673(B2) |
申请公布日期 |
2006.04.11 |
申请号 |
US20030733676 |
申请日期 |
2003.12.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ABRAHAM DAVID W. |
分类号 |
H01L29/76;G11C11/15;H01L21/336;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L43/10 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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