Organic n-channel semiconductor device of N,N' 3,4,9,10 perylene tetracarboxylic diimide

摘要

The invention provides a device comprising an improved n-channel semiconducting film. This film consists of a perylene tetracaboxylic acid diimide compound and was deposited onto substrates by vacuum sublimation. Thin film transistor devices comprising such films as the semiconducting channel exhibit a field effect electron mobility greater than 0.01 cm²/Vs and an on/off ratio of 10000 and higher.