发明名称 |
High radiance led chip and a method for producing same |
摘要 |
The invention concerns a light-emitting diode chip ( 1 ) comprising a radiation-emitting active region ( 32 ) and a window layer ( 2 ). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region ( 32 ) is smaller than the cross-sectional area of the window layer ( 2 ) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.
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申请公布号 |
US7026657(B2) |
申请公布日期 |
2006.04.11 |
申请号 |
US20030258154 |
申请日期 |
2003.08.11 |
申请人 |
OSRAM GMBH |
发明人 |
BOGNER GEORG;KUGLER SIEGMAR;NIRSCHL ERNST;OBERSCHMID RAIMUND;SCHLERETH KARL-HEINZ;SCHOENFELD OLAF;STATH NORBERT;NEUMANN GERALD |
分类号 |
H01L21/00;H01L33/02;H01L33/08;H01L33/14;H01L33/20;H01L33/44 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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