| 发明名称 |
Semiconductor light emitting devices including current spreading layers |
| 摘要 |
III-nitride or III-phosphide light emitting devices include a light emitting region disposed between a p-type region and an n-type region. At least one heavily doped layer is disposed within either the n-type region or the p-type region or both, to provide current spreading.
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| 申请公布号 |
US7026653(B2) |
申请公布日期 |
2006.04.11 |
| 申请号 |
US20040766277 |
申请日期 |
2004.01.27 |
| 申请人 |
LUMILEDS LIGHTING, U.S., LLC |
发明人 |
SUN DECAI |
| 分类号 |
H01L29/26;H01L27/15;H01L31/12;H01L33/02;H01L33/14;H01L33/30 |
主分类号 |
H01L29/26 |
| 代理机构 |
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代理人 |
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