| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device the lifetime characteristic or the like of which is excellent for a wide range of wavelength bands. SOLUTION: In the semiconductor laser device wherein upper faces of ridge strip parts of a first semiconductor element and a second semiconductor element on the first semiconductor element are opposed to each other, the first semiconductor element has current constriction layers each located at both sides of the ridge strip part, the current constriction layer has a first region and a second region whose heights are sequentially different as being parted from the ridge strip part, and the second region is higher than the upper face of the ridge strip part. The height of the first region of the current constriction layer in the first semiconductor element is nearly the same as the height of the upper face of the ridge strip part. COPYRIGHT: (C)2006,JPO&NCIPI
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