| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for manufacturing a fin type NAND flash memory in a self-alignment process along with its manufacturing method. SOLUTION: By employing a strip-like SOI layer, a silicon layer region 8 is formed on a BOX oxide film 13. A tunnel insulating film 9 and an insulating film region 31 are formed respectively on the side surface and upper surface of the silicon layer region 8. A floating gate region 36 is formed to contact the tunnel insulating film 9 and the insulating film region 31. An insulating film 37 is formed to contact the floating gate region 36. A floating gate region 38 is formed to contact the insulating film 37 and the insulating film region 31. In this construction, the floating gate region 36 is formed higher than the silicon region 8. COPYRIGHT: (C)2006,JPO&NCIPI
|
