发明名称 |
Method for fabricating semiconductor device |
摘要 |
Disclosed is a method for fabricating a semiconductor device. The method includes the steps of: forming a plurality of conductive patterns on a substrate; depositing an insulation layer on the substrate; recessing the insulation layer until a vertical height of the insulation layer becomes lower than that of the plurality of conductive patterns; forming an etch stop layer in the form of sidewalls of the conductive patterns; forming a mask pattern over the etch stop layer; and forming a plurality of contact holes such that etch profiles of the plurality of contact holes are aligned with the plurality of conductive patterns and the substrate is exposed by etching the insulation layer by using the mask pattern as an etch mask.
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申请公布号 |
US2006073699(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20050154473 |
申请日期 |
2005.06.17 |
申请人 |
HYNIX SEMICONDUCTOR, INC. |
发明人 |
LEE SUNG-KWON;LEE MIN-SUK |
分类号 |
H01L21/4763;H01L21/31 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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