Semiconductior multilayer structurehaving inhomogeneous quantum dots, light-emitting diode using same, semiconductor laser diode, semiconductor optical amplifier, and method for manufacturing them

摘要

A semiconductor multi-layered structure ( 1 ) having non-uniform quantum dots formed without requiring lattice strain is of a double hetero junction structure in which an active layer ( 3 ) has clad layers ( 5, 6, 16 ) laid on its opposite sides, wherein the clad layers are larger in forbidden band than the active layer ( 3 ), and the active layer ( 3 ) includes at least one layer of non-uniform quantum dots ( 2 ) formed without requiring lattice strain and wherein the non-uniform quantum dots in the layer ( 2 ) are composed of compound semiconductor material and different from one another in either size or material composition or both. A light emitting diode ( 15, 15 '), a semiconductor laser diode ( 20 ) and a semiconductor light amplifier ( 30 ) are also provided, each having a semiconductor multi-layered structure ( 1, 1 ') with non-uniform quantum dots. They can emit or amplify light wide in range of wavelengths.