| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a forming method for a circuit pattern in which a film reduction rate in development is small and a resist pattern of high resolution can be obtained even when the mixing amount of naphthoquinonediazido is made small in a photolithography stage using positive photoresist containing naphthoquinonediazido and novolac resin and which is advantageous in cost since a resist film has high transparency and then the sensitivity in exposure is high, when a semiconductor substrate, a liquid crystal and the like are manufactured. <P>SOLUTION: The forming method for the circuit pattern by photolithography using positive photoresist containing 3 to 25 wt. pts. naphtoquinonediazido for 100 wt. pts. novolac resin 100 includes a stage (1) of forming a resist film by coating a substrate surface with the positive photoresist, a stage (2) of exposing the resist film, a stage (3) of heating the photoresist film so that its surface temperature is ≥140°C and higher than bottom surface temperature, and a stage (4) of developing the resist film in an alkali aqueous solution. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
