| 摘要 |
<P>PROBLEM TO BE SOLVED: To manufacture a thin film of metal oxide, having thickness and quality suitable for use in an integrated circuit. <P>SOLUTION: Precursor liquid, containing several metals 2-ethylhexanoate, such as strontium, tantalum and bismuth 2-ethylhexanoate in xylene/methyl ethyl solvent, is adjusted, and substrates (5, 858) are arranged in a vacuum deposition chamber (2); a small quantity of hexamethyldisilazane is added to the precursor liquid; the precursor liquid thus adjusted is sprayed; and spray is made to flow into the chamber and a layer of the precursor liquid is deposited on the substrates. The liquid is dried, sintered, and annealed, and a thin film (506, 860) of a ferroelectric layer super-lattice material, such as strontium bismuth tantalite is formed on the substrate. Next, integrated circuits (600, 850) are completed, and at least a part of the ferroelectric layer super-lattice material film is included in constituent elements (604, 872) of the integrated circuits. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
