| 摘要 |
PROBLEM TO BE SOLVED: To reduce a liquid crystal capacity by thickening the insulating film of a non-linear element of a lateral structure without causing a failure such as charge-up and resist burning in the case of dry etching. SOLUTION: A manufacturing method of a TFD element forms a first insulating film 63a composed of a TaO<SB>x</SB>on a lower electrode 62a by a gas phase method such as a sputtering method etc. Thus, the dielectric constant and the resistance of the first insulating film 63a can be lowered. Next, the first insulating film 63a and a first metallic film are dry-etched to form the lower electrode 62a and the first insulating film 63a. Next, a second insulated film 63b is formed on the side face of the lower electrode 62a by a gas phase method, and an upper electrode 64a is formed on the first insulating film 63a. By forming the first insulating film 63a by the gas phase method, the first insulating film 63a can be thickened without causing the failure such as charge-up and resist burning, so that a capacity of the TFD element can be reduced. COPYRIGHT: (C)2006,JPO&NCIPI |
