SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND PROCESSING SOLUTION

摘要

PROBLEM TO BE SOLVED: To protect wiring by an alloy film by forming the alloy film with a necessary minimum thickness to have the diffusion preventing effect against e.g. oxygen or copper in more uniform thickness all over the substrate while alleviating the dependency on a wiring pattern. SOLUTION: The alloy film is formed containing 1-9 atomic% of tungsten or molybdenum and 3-12 atomic% of phosphorus or boron by electroless plating on at least a portion of the area surrounding the embedded wiring formed by embedding a wiring material in a recess for wiring formed in an insulator on the substrate. COPYRIGHT: (C)2006,JPO&NCIPI