METHOD OF FORMING FERROELECTRIC FILM, AND METHODS OF MANUFACTURING CAPACITOR AND SEMICONDUCTOR MEMORY DEVICE USING THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a ferroelectric film, and also to provide methods of manufacturing a capacitor and a semiconductor memory device that uses the method. SOLUTION: There is provided the method of forming a ferroelectric film comprising steps of: preparing a substrate; depositing an amorphous ferroelectric film on a substrate; irradiating the amorphous ferroelectric film with laser beam; and crystallizing the amorphous ferroelectric film. Also provided are: a method of manufacturing a capacitor, in which the ferroelectric film is formed using the method of manufacturing the ferroelectric film; and a method of manufacturing a semiconductor memory device using the method of manufacturing the capacitor. Accordingly, the ferroelectric film is formed at a temperature lower than 500°C, and the thermal damage of the other member is reduced, in forming ferroelectric film. COPYRIGHT: (C)2006,JPO&NCIPI