发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS AND VALVE DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent a solid film from being formed in a portion facing a gas flow passage in a valve device, especially a valve device for making flow therethrough a solid-substance generating gas. SOLUTION: In a semiconductor manufacturing apparatus, there is provided a valve device comprising a fixed part such as a valve box 2, etc. having the gas flow passage and a movable part such as a valve body 9, etc. for opening or closing the gas flow passage between a reactor chamber and an exhausting pump. In this case, a heater 31 for the fixed part is attached to the fixed part in which a heater heats a part adjacent to a gap between the valve box 2 and the valve body, when exhaust gas exhausted accompanied by treatment in the reactor chamber flows through the gas flow passage. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093727(A) 申请公布日期 2006.04.06
申请号 JP20050313333 申请日期 2005.10.27
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TOMEZUKA KOJI;FURUICHI MASAYOSHI
分类号 H01L21/205;C23C16/44 主分类号 H01L21/205
代理机构 代理人
主权项
地址