| 摘要 |
PROBLEM TO BE SOLVED: To obtain a wafer where the surface uniformity of BMD density is attained even if a ring shape OSF area is formed in lifting a single crystal by a CZ method. SOLUTION: The silicon wafer which contains a ring shape area OSF grown in a concentration of nitrogen of 2.9×10<SP>14</SP>to 5.0×10<SP>15</SP>atoms/cm<SP>3</SP>and in a concentration of oxygen of 1.27×10<SP>18</SP>to 3.0×10<SP>18</SP>atoms/cm<SP>3</SP>by a CZ method is heated up to a heat treatment temperature of 1,000-1,200°C at a rate of the temperature rising of 0.5-2.0°C/min in an atmosphere of a reducible gas or an inert gas in heat treatment. COPYRIGHT: (C)2006,JPO&NCIPI
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