| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor opto-electrical element having a simple structure wherein a current by a forward bias can be narrowed or an intense electric field by a reverse bias can be locally applied. SOLUTION: The semiconductor opto-electrical element 1 comprises the semiconductor region 3 of a first conductivity type, an active layer 5, the semiconductor region 7 of a second conductivity type, and a first DBR portion 8a and a second DBR portion 8b. The semiconductor region 3 of the first conductivity type is formed on a GaAs semiconductor substrate 11 of the first conductivity type, and the semiconductor region 7 of the second conductivity type is formed on the semiconductor region 3 of the first conductivity type. The active layer 5 is formed between the semiconductor region 3 of the first conductivity type and the semiconductor region 7 of the second conductivity type. The semiconductor region 3 of the first conductivity type and the semiconductor region 7 of the second conductivity type form a pn junction around the active layer 5. The semiconductor region 3 of the first conductivity type, the active layer 5, and the semiconductor region 7 of the second conductivity type are located between the first DBR 8a and the second DBR 8b. COPYRIGHT: (C)2006,JPO&NCIPI
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