| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device capable of providing a base material surface for precise photolithography. SOLUTION: A positive resist 5 is coated on the surface of a semiconductor layer 1 where a LOCOS region 2 is formed. By exposure development using a photomask 6, a resist pattern that covers the edge of LOCOS region 2 and a nitride film 4 is formed. The inside of LOCOS region 2 is removed by etching through an opening of the resist 5. After the positive resist 5 is removed, a negative resist is applied. By exposure development using the photomask 6, a resist pattern that covers the inside of LOCOS region 2 is formed. The LOCOS region 2 and the nitride film 4 which is the parts other than where a resist is arranged are removed by etching. Since the photomask 6 is identical with that used when forming the LOCOS region 2, a base material step caused by the LOCOS region 2 is easily and accurately reduced. COPYRIGHT: (C)2006,JPO&NCIPI
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