发明名称 DEVICE OF MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To prevent occurrence of flaw on the rear surface of a wafer which causes slipping. SOLUTION: An anneal device 10 comprises a process tube 21 in which a process chamber 22 is formed, a heater unit 16 for heating the process chamber 22, and a boat 41 which holds a plurality of wafers 1 to carry them into the process chamber 22. The boat 41 comprises a cylinder 42 which is set upright, a plurality of stages of insert slots 43 provided horizontally on the cylinder 42 to insert the wafers 1, respectively, a plurality of stages of supports 45 formed by the insert slots 43, tweezer insert openings 46 and 47 provided across the plurality of stages of supports 45 at front and rear parts of the cylinder 42, and a window 48 so formed on the outer periphery of the cylinder 42 as to penetrate the insert slots 43. Since the wafer contact area of the support which supports a wafer is larger, occurrence of flaw is prevented that is caused by dead weight or thermal deformation of the wafer at the contact part between the wafer and the boat. Slipping of the wafer which is caused by the flaw is prevented. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006093207(A) 申请公布日期 2006.04.06
申请号 JP20040273367 申请日期 2004.09.21
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIYAMA TOMOSHI;ICHIMURA SATORU;YOSHIDA HIDENARI
分类号 H01L21/324;H01L21/22;H01L21/31 主分类号 H01L21/324
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