| 摘要 |
1285050 Image pick up tubes; semi-conductor devices RCA CORPORATION 1 Dec 1969 [29 Nov 1968] 58492/69 Headings HID and H1K A charge storage target comprises a semiconductor wafer 20 of one conductivity, an array of discrete regions 22 in the wafer of a second conductivity and, covering the wafer surface between the regions, a layer of insulating material 24 containing an excess concentration of non-mobile ions. The ions counter-act the effects in the wafer of an electrostatic field resulting from charge formed on the insulating surface by reading means. A Si photodiode target for a vidicon tube comprises a monocrystalline P doped N-type bulk region 20, an array of B doped P-type regions 22 and an insulating layer 24 of SiO 2 having an excess of positive oxide ions 25 formed by baking the target in oxygen during the diffusion of B to form the regions 22. If used in the secondary emission mode an excess of negative non-mobile ions is provided. The layer 24 may be Al 2 O 3 or Si 3 N 4 but it is not continuous. Specification 1,285,049 is referred to. |
