| 摘要 |
A power semiconductor module ( 1 ) has power semiconductor components ( 2, 4, 6, 8, 10, 12 ) arranged on a substrate ( 14 ), at least one portion of which components is connected in parallel and arranged symmetrically on the substrate ( 14 ). A second conduction plane ( 24, 26 ) is provided for making contact with the power semiconductor components ( 2, 4, 6, 8, 10, 12 ). The second conduction plane is arranged in a manner electrically insulated from the substrate surface ( 16 ) above the surfaces of the power semiconductor components ( 2, 4, 6, 8, 10, 12 ) that are remote from the substrate surface ( 16 ).
|
