| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve problems about techniques of improving performances in microfabrication of a semiconductor device using high-energy beams, X-rays, electron beams or EUV light, to provide a positive resist composition having all of satisfying high sensitivity, high resolution and preferable line edge roughness, and to provide a method for forming a pattern by using the composition. <P>SOLUTION: The positive resist composition contains: (A) a resin which contains a repeating unit having a specified styrene skeleton and a repeating unit having a specified cyclic structure and which becomes soluble with an alkali developer solution by the effect of an acid; and (B) a compound which generates an acid by irradiation with active rays or radiation. The method for forming a pattern is carried out by using the resist composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
