| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a micro electron source device achieving high reliability of electron emission characteristics by suppressing damage to a micro electron source layer by a simple technique. <P>SOLUTION: The manufacturing method comprises the steps of: forming the micro electron source layer 12 including a plurality of carbon nanotubes on a cathode electrode 11 provided on a supporting substrate 10; forming a protection layer P composed of oxides of at least two alkali earth metals on the micro electron source layer 12; forming an interlayer insulating film 13L covering the supporting substrate 10, the cathode electrode 11 and the protection layer P and forming a gate electrode having an opening on the interlayer insulating film 13L; forming a gate hole that penetrates the gate electrode and the interlayer insulating film 13L and allows the protection layer P to be exposed therefrom by dry-etching a portion of the interlayer insulating film 13L directly below the opening; and removing the protection layer P in the gate hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
