| 摘要 |
PROBLEM TO BE SOLVED: To provide a pressure wave generator capable of preventing the disconnection of a heating element layer due to the temperature rise of the heating element layer and stably generating the pressure waves of an ultrasonic wave band over the long period of time. SOLUTION: The pressure wave generator has a pressure wave generation element chip provided with a semiconductor substrate 1 composed of a silicon substrate as a support substrate, the heating element layer 3 formed on one surface side of the semiconductor substrate 1, a heat insulation layer 2 composed of a porous silicon layer interposed between the semiconductor substrate 1 and the heating element layer 3 on the one surface side of the semiconductor substrate 1 and a pair of pads 4 formed in the form of being in contact with the heating element layer 3. Tungsten is adopted as the material of the heating element layer 3, aluminum is adopted as the material of the pads 4, and a pair of conductive contacts 5 thermally bonded and electrically connected with the respective pads 4 are provided as a heat radiation means for radiating the heat of the respective pads 4 to the outside of the pressure wave generation element chip on the one surface side of the semiconductor substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
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