HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
摘要
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
申请公布号
WO2006036565(A2)
申请公布日期
2006.04.06
申请号
WO2005US32894
申请日期
2005.09.15
申请人
CREE, INC.;EDMOND, JOHN, ADAM;SLATER, DAVID, BEARDSLEY, JR.;BHARATHAN, JAYESH;DONOFRIO, MATTHEW
发明人
EDMOND, JOHN, ADAM;SLATER, DAVID, BEARDSLEY, JR.;BHARATHAN, JAYESH;DONOFRIO, MATTHEW