USE OF A CHALCOGEN PLASMA TO FORM CHALCOGENIDE SWITCHING MATERIALS FOR NANOSCALE ELECTRONIC DEVICES,申请号WO2005US22698-传众专利搜索

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发明名称	USE OF A CHALCOGEN PLASMA TO FORM CHALCOGENIDE SWITCHING MATERIALS FOR NANOSCALE ELECTRONIC DEVICES
摘要	A method of forming a metal chalcogenide. A metal is provided and exposed to a chalcogen plasma to form the metal chalcogenide.
申请公布号	WO2006014249(A3)	申请公布日期	2006.04.06
申请号	WO2005US22698	申请日期	2005.06.28
申请人	HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;LI, ZHIYONG;WANG, SHIH-YUAN	发明人	LI, ZHIYONG;WANG, SHIH-YUAN
分类号	H01L45/00;H01L21/06;H01L27/24	主分类号	H01L45/00
代理机构		代理人
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