MASK PATTERN FOR MANUFACTURING SEMICONDUCTOR DEVICE AND FORMING METHOD THEREOF, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE WITH FINE PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a mask pattern for semiconductor device fabrication and a forming method thereof, and a manufacturing method for a semiconductor device with a fine pattern.

SOLUTION: The mask pattern include a resist pattern formed on a semiconductor substrate and an organic-inorganic hybrid siloxane network film formed on the resist pattern. The siloxane network film consists of a reactant of a tetra-alkoxy silane crosslinking agent and a trialkoxy-monoalkyl silane crosslinking agent. For forming the siloxane network film, the surface of the resist pattern is coated with siloxane oligomer first. Then sol-gel reaction of siloxyane oligomer is induced on the surface of the resist pattern. After siloxane network film is formed, unreacted siloxane oligomer left at the periphery of the siloxane network film is removed with pure water.

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