发明名称 MASK INSPECTING APPARATUS AND METHOD, AND ELECTRON-BEAM EXPOSURE SYSTEM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a mask inspecting apparatus and method for electron-beam exposure and an electron-beam exposure system which performs an exposure-mask-pattern inspection highly accurately by using the electron-beam exposure system used practically. <P>SOLUTION: The mask inspecting apparatus has an electron-beam gun for generating an electron beam, an exposure mask for reshaping the electron beam into a predetermined sectional shape, a scanning means for performing a scan by using the electron beam reshaped by the exposure mask, a thin film having a transmission micro-hole for transmitting therethrough the electron beam used by the scanning means, a selecting means having its opening larger than the transmission micro-hole and for transmitting selectively a portion of the reshaped electron beam which is so constituted as to include a substrate having a thickness larger than the one of the thin film, and a sensing means for so sensing the electron beam transmitted through the selecting means as to output a current signal. The exposure-mask-pattern inspection is performed by this mask inspecting apparatus. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006093579(A) 申请公布日期 2006.04.06
申请号 JP20040279675 申请日期 2004.09.27
申请人 ADVANTEST CORP 发明人 YASUDA HIROSHI;HARAGUCHI TAKESHI
分类号 H01L21/027;G03F1/84;G03F1/86;H01J9/14;H01J37/244;H01J37/305 主分类号 H01L21/027
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