发明名称 MICRO ELECTRON SOURCE DEVICE, MANUFACTURING METHOD THEREFOR, AND FLAT DISPLAY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a micro electron source device capable of fabricating a micro electron source device stably while maintaining the dispersibility of a carbon nanotube, and to provide a micro electron source device capable of increasing the lifetime by suppressing degradation in electron emission characteristics of the carbon nanotube, and a flat display device using the micro electron source device. <P>SOLUTION: The micro electron source device comprises: a cathode electrode 11, an insulating layer 13 and a gate electrode 14 that are stacked in this order on a substrate 10; an opening 15 formed in the gate electrode 14 and the insulating layer 13; and a micro electron source layer 12 formed at the bottom of the opening 15. The micro electron source layer 12 is formed by embedding a carbon nanotube 12a coated with an oxidation-resistant film in a conductive matrix 12b, and allowing an end of the carbon nanotube 12a to project from the matrix. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006092927(A) 申请公布日期 2006.04.06
申请号 JP20040277377 申请日期 2004.09.24
申请人 SONY CORP 发明人 MUROYAMA MASAKAZU;ITO HIROYUKI;SAITO ICHIRO
分类号 H01J1/304;H01J9/02;H01J29/04;H01J31/12 主分类号 H01J1/304
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