| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film transistor display panel capable of simplifying a manufacturing process, minimizing manufacture cost, and assuring a stable property, and to provide the method of manufacturing the same. <P>SOLUTION: The thin-film transistor indicating panel comprises an insulating substrate having a pixel portion and a drive portion, a polycrystalline silicon layer formed on the insulating substrate and having a source region, a drain region, a channel region, and a lightly-doped region, a gate insulating film overlying the polycrystalline silicon layer; an impurity layer superposed on the channel region such that the gate insulating film is interpositioned therebetween and having silicon to which an impurity is doped; a gate electrode formed in the upper portion of the impurity region, an interlayer insulating film having first and second contact holes for exposing the source region and the drain region, respectively, a source electrode formed on the interlayer insulating film and connected with the source region via the first contact hole; and a drain electrode formed on the interlayer insulating film and connected with the drain region via the second contact hole. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
