| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor array substrate and a manufacturing method thereof. SOLUTION: A shield layer is formed between lead wires in a peripheral area of a substrate. The shield layer and a gate layer are simultaneously formed, thereby decreasing light leakage between lead wires connected to a source/drain layer. Furthermore, the shield layer and the source/drain layer are simultaneously formed, thereby decreasing light leakage between lead wires connected to the gate layer. Moreover, a common voltage is applied to the shield layer, thereby decreasing signal interference between lead wires. Further, in an electric inspection of a thin film transistor array, short-circuiting between a lead wire and the shield layer can be measured. COPYRIGHT: (C)2006,JPO&NCIPI |
