发明名称 |
Spin polarization amplifying transistor |
摘要 |
An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.
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申请公布号 |
US2006071248(A1) |
申请公布日期 |
2006.04.06 |
申请号 |
US20040956867 |
申请日期 |
2004.09.30 |
申请人 |
NIKONOV DMITRI E;BOURIANOFF GEORGE I |
发明人 |
NIKONOV DMITRI E.;BOURIANOFF GEORGE I. |
分类号 |
H01L29/80 |
主分类号 |
H01L29/80 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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