| 摘要 |
To greatly increase the storage density of a storage apparatus, an electron beam E emitted from a cold cathode 101 is accelerated by an accelerating electrode 102 , caused to converge by a convergence electrode 103 , deflected by a deflection electrode 104 and applied to a minute region of a storage film 105 . The storage film 105 includes, for example, a phase change film 105 a. The film is rapidly heated and cooled to change into an amorphous state upon irradiation with an electron beam E with high energy, while being gradually cooled to change into a crystallized state upon irradiation with an electron beam E with approximately intermediate energy, thereby storing data. Upon irradiation with an electron beam E with low energy, the potential difference between a detection electrode 105 b and an anode 105 c is detected depending on the state, i.e., the amorphous or crystallized state, thereby reading stored data.
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